Fig. 2
From: Interplay of orbital effects and nanoscale strain in topological crystalline insulators
Spatial distribution of different types of strain. a STM topograph of ~130 nm square region of the sample (Vset = −50 mV, Iset = 200 pA), showing the strain-generated topographic superlattice with period of ~ 15 nm. b Schematic of the (001) surface of SnTe. Arrows in b denote the x- and y-axes, which have the same orientation in all panels, as shown again in c. c-f The components of the 2 × 2 strain tensor ∇u(r) extracted from the topograph in a. u ij denotes (∂u i )/(∂r j ). g The biaxial strain map C. h The uniaxial strain map U. All scale bars are 30 nm
