Fig. 3

Pressure-induced semiconductor-to-metal transitions in FePS3 and FePSe3. a, b Electrical resistances of compressed powder of FePX3 (X = S, Se) as a function of pressure. Insets of a, b show the temperature dependence (R–T) of the resistance of FePS3 and FePSe3 under high pressure, respectively. c Electrical resistance measurements on a FePSe3 single crystal showing an in-plane metallization behavior. Inset of c shows the photograph of the FePSe3 single crystal with four Au probes inside a DAC. The scale bar is 100 μm