Fig. 1
From: Abnormal band bowing effects in phase instability crossover region of GaSe1-xTe x nanomaterials

Synthesis process and morphology of GaSe1−xTe x nanostructures. a Schematic of the synthesis process of GaSe1−xTe x nanostructures in a single-zone tube furnace. b Optical images of the GaSe1−xTe x nanostructures grown at different d between GaTe and GaSe source. Corresponding x values are shown on the top left corner of each image. Scale bar = 5 μm for x = 0.28, 0.49 and 0.56; 10 μm for x = 0.57 and 0.8. c EDS spectra of the GaSe1−xTe x nanostructures and the calculated composition