Fig. 3
From: Abnormal band bowing effects in phase instability crossover region of GaSe1-xTe x nanomaterials

Phase dependent optoelectronic properties. a Optical images of the GaSeTe devices based on the monoclinic (top, scale bar = 10 μm) phase and hexagonal (bottom, scale bar = 5 μm) phase. b Angle resolved photocurrent as a function of light polarization (E field) direction measured on both devices. c Time resolved photoresponse of the device based on monoclinic GaSeTe (Vds = −0.2 V). The light polarization is alternatively switched between parallel and perpendicular to the b-axis