Fig. 1
From: Crossover from lattice to plasmonic polarons of a spin-polarised electron gas in ferromagnetic EuO
Electronic structure of the ferromagnetic semiconductor EuO. a Schematic energy level diagram of EuO, with a half-filled Eu 4f band split by strong Coulomb interactions yielding a band gap between Eu 4f (5d) valence (conduction) bands. b DFT calculations of the electronic structure reproduce these general features and indicate the conduction band minimum (CBM) is located at the Brillouin zone face, X, point. c ARPES measurements (\(h\nu\) = 48 eV) from a lightly Gd-doped sample (Eu1−xGd x O, x = 0.023) qualitatively match the DFT valence band dispersions. d The charge carrier doping additionally populates the spin-majority Eu 5d conduction-band state at the X-point (region shown by black box in (c))
