Fig. 4 | Nature Communications

Fig. 4

From: Chemically specific termination control of oxide interfaces via layer-by-layer mean inner potential engineering

Fig. 4

2DEL of LAO/STO grown on epitaxial SrTiO3 films. a Out-of-phase RHEED oscillations (only the last 10 cycles are shown) for the growth of TiO2-terminated homoepitaxial SrTiO3 films. b Room-temperature sheet resistivity of the n-type LAO/STO interfaces grown on 60 u.c. thick TiO2-terminated epitaxial SrTiO3 films, showing a critical LAO thickness of 4 u.c. The p-type LAO/STO interface grown on SrO-terminated epitaxial SrTiO3 film is insulating (blue solid square)

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