Fig. 4 | Nature Communications

Fig. 4

From: Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide

Fig. 4The alternative text for this image may have been generated using AI.

Experimental hard X-ray angle-resolved photoemission data. Data shown for a GaAs and b (Ga,Mn)As in a (-1-1-1) reflection geometry, with photon energy of ∼2.7 keV. The light gray curves are calculations based on a local-density band structure excited by direct transitions into free-electron final-states, and were used to determine the precise sampling in k–space, which was slightly different for the two samples. c, d Experimental decomposition into Ga+Mn and As components using core-level intensities and Eqs 1 and 2. The color scale is maximum Ga,Mn = 1.0 and maximum As = −1.0. e, f theoretical calculations of element-resolved Bloch spectral functions, using the coherent potential approximation for (Ga,Mn)As and the same sampling in k–space as a and b

Back to article page