Fig. 3
From: Quantifying the role of surface plasmon excitation and hot carrier transport in plasmonic devices
Impact of interband and intraband transitions on IQE of hot carrier devices. a Prompt hot electron energy distribution (Pgen) showing the carrier energy E above the Au Fermi level (EF) calculated with DFT (solid line) as well as under the parabolic band approximation (Fowler-like model, dashed line) for incident photon energies (hν) of 1.4 eV and b 2.4 eV. The shaded area in both plots depicts the position of the Schottky barrier, ΦB, limiting the possibility of collection to those carriers with energy E−EF > ΦB. The insets show a schematic of the metal and semiconductor band structure illustrating the predominance of intraband transitions (a) and co-existence with interband transitions (b) as well as the presence of the Schottky barrier at the interface; c IQE spectra calculated based on the Pgen obtained with DFT (magenta solid curve), i.e., including interband transitions, as well as with parabolic band approximation (gray dashed curve), i.e., accounting only for intraband transitions. For the injection process, conservation of tangential momentum is assumed21. Transport of hot electrons within the metal nanostructure has been neglected
