Fig. 4 | Nature Communications

Fig. 4

From: Room-temperature polarized spin-photon interface based on a semiconductor nanodisk-in-nanopillar structure driven by few defects

Fig. 4

Room temperature spin amplification enabled by few defects. a Power-dependent Pe and spin amplification factor \({\mathrm{SAF}} = P_{\mathrm{e}}{\mathrm{/}}P_{\mathrm{e}}^0\) from the GaNAs nanodisks (NDs) with the [Nmin] (the open triangles) and [Nmax] (the filled circles). The solid symbols are experimental data, and the solid lines are the fitting curves obtained by the rate equation analysis. b For comparison, power-dependent Pe from GaAs is also shown by the gray symbols. The vertical bars indicate the experimental error bars which are derived from the statistics of five measurements. The dashed horizontal line marks \(P_{\mathrm{e}}^0\)

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