Fig. 1
From: Realization of vertical metal semiconductor heterostructures via solution phase epitaxy
Morphology and composition analyses of Sn0.5W0.5S2/SnS2 heterostructures. a SEM image of as-prepared Sn1–xWxS2/SnS2 heterostructures (scale bar, 1 μm). Inset: size distribution of Sn1–xWxS2/SnS2 heterstructures. b Top-view TEM image of typical Sn1–xWxS2/SnS2 heterostructures (scale bar, 200 nm). Inset: photograph of a solution of Sn1–xWxS2/SnS2 heterostructures showing the Tyndall effect. c AFM image and height analysis of a Sn1–xWxS2/SnS2 heterostructure (scale bar, 100 nm). Inset: thickness distribution of Sn1–xWxS2/SnS2 heterstructures, showing a mean value of 60 nm. d Side-view TEM image of a typical Sn1–xWxS2/SnS2 heterostructure, revealing Sn1–xWxS2 nanosheets grown on both the top and bottom basal faces of a SnS2 nanoplate (scale bar, 10 nm). e STEM image and EDX mapping on a typical Sn1–xWxS2/SnS2 heterostructure (scale bar, 100 nm). f Cross-sectional STEM image and EDX line analysis on a typical Sn1–xWxS2/SnS2 heterostructure (scale bar, 10 nm)
