Fig. 2
From: Realization of vertical metal semiconductor heterostructures via solution phase epitaxy
Structural properties of Sn0.5W0.5S2/SnS2 heterostructures. a XRD pattern of Sn0.5W0.5S2/SnS2 heterostructures deposited on a glass slide. b SAED patterns of a Sn0.5W0.5S2/SnS2 heterostructure along the [001] zone axis (scale bar, 2 nm−1). c HRTEM image of a typical Sn0.5W0.5S2/SnS2 heterostructure lying flatly on a copper grid (scale bar, 2 nm). d A Moiré pattern with a periodicity of 4.0 nm was observed (scale bar, 5 nm), whose fast Fourier transform (FFT) diffraction pattern is shown as the inset. XPS (e) W 4f and f Sn 3d spectra of as-prepared Sn0.5W0.5S2/SnS2 heterostructures
