Fig. 3
Electrical characterizations of Crys-P and EG-P OECTs. a Output and b transconductance (gm) characteristics of crystallized PEDOT:PSS (Crys-P, red curves) and 5% ethylene glycol-treated PEDOT:PSS (EG-P, black curves) OECT devices. In the output plots, VG was scanned from 0 to 0.6 V along the blue dotted arrow. c a schematic definition of the geometrical parameters in the OECT channel. W, d, and L denote the width, thickness and length of the channels, respectively. d The scattered plots of Cyrs-P (red circles)/EG-P(black circles) gm as a function of applied gate bias and channel geometry [WdL−1 (Vth – Vg)]. Each data point represents an OECT measurement with a given channel geometry. e A equivalent circuit model for the discrimination between Rc and Rch within a transistor channel. f TLM analysis of the Crys-P OECT (d = 61 nm) with the equivalent circuit model. g The plot of W-normalized Rc as a function of VG
