Fig. 1
DQD devices from Ge HWs. a Schematic showing a Ge HW contacted with source and drain electrodes and covered by two top gates (G1, G2). The hafnium oxide layer separating the HW from the gates is not shown. b Scanning electron micrograph of a device similar to the ones measured. The scale bar is 200 nm. c Stability diagram of DQD device A showing the characteristic bias triangles at a bias voltage of VSD = 2 mV. d Representative zoom-in of a pair of bias triangles at VSD = −2 mV from device B. The dashed black line indicates the edge of the lower bias triangle
