Fig. 2 | Nature Communications

Fig. 2

From: Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

Fig. 2The alternative text for this image may have been generated using AI.

Raman and conductance measurements of fluorinated graphene. a Optical images (bottom) of CVD WS2 sheet covered with prepatterned CVD GES before and after XeF2 etching (the scale bar is 50 μm). Schematic illustrations (top) show cross-section of graphene-covered WS2 along white dashed lines for each step. After etching, uncovered WS2 is etched away, meanwhile the covered WS2 remains unchanged under protection of fluorinated GES. b Raman spectra of graphene on hBN under increasing exposure to XeF2. As XeF2 exposure time increases, the graphene D peak becomes prominent while the 2D peak is damped, indicating the formation of sp3-type defects. These results are consistent with other studies of graphene fluorination. c Electrical conductance of graphene on hBN fluorinated by XeF2 treatment (the scale bar in the inset is 10 μm). After a 30 s XeF2 exposure, FG becomes fully insulating

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