Fig. 2 | Nature Communications

Fig. 2

From: Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

Fig. 2

Raman and conductance measurements of fluorinated graphene. a Optical images (bottom) of CVD WS2 sheet covered with prepatterned CVD GES before and after XeF2 etching (the scale bar is 50 μm). Schematic illustrations (top) show cross-section of graphene-covered WS2 along white dashed lines for each step. After etching, uncovered WS2 is etched away, meanwhile the covered WS2 remains unchanged under protection of fluorinated GES. b Raman spectra of graphene on hBN under increasing exposure to XeF2. As XeF2 exposure time increases, the graphene D peak becomes prominent while the 2D peak is damped, indicating the formation of sp3-type defects. These results are consistent with other studies of graphene fluorination. c Electrical conductance of graphene on hBN fluorinated by XeF2 treatment (the scale bar in the inset is 10 μm). After a 30 s XeF2 exposure, FG becomes fully insulating

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