Fig. 3
From: A hardware Markov chain algorithm realized in a single device for machine learning
Theoretical model and simulations for SnSe RRAM. a A theoretical model for the SnOx/SnSe/SnOx heterostructure. b The simulated switching behavior showing good fit with experimental results for the two-step set and reset behavior. c The filament length vs. the voltage in the SnOx/SnSe/SnOx heterostructure. d The filament potential vs. the voltage in the SnOx/SnSe/SnOx heterostructure. e Proposed filament growth and rupture mechanism to explain the double set and reset processes
