Fig. 2
From: Signature of quantum Griffiths singularity state in a layered quasi-one-dimensional superconductor

Anisotropic superconducting behavior in Ta2PdS5 nanowire device. a Schematic device structure based on a Ta2PdS5 nanowire. b Temperature dependence of the normalized resistance (red solid line) of Ta2PdS5 nanowire device with a cross-sectional area of 120 nm (thickness) × 300 nm (width). Inset, an optical image of the Ta2PdS5 device, scale bar, 5 μm. c The temperature-dependent resistance of the device under a magnetic field perpendicular to the substrate, the resistance is normalized to the normal-state value right above the superconducting transition. d Angular dependence of the critical magnetic field BC2 of a similar device measured at 2.4 K. Inset, Schematic configuration of angular-dependent magnetoresistance measurement. The θ = 0 is defined as the magnetic field parallel to the b-axis. e Normalized R-T characteristics of Ta2PdS5 under the magnetic field parallel to the b-axis. f Temperature-dependent BC2 for the magnetic field parallel and perpendicular to the b-axis. The red and blue solid lines are the theoretical fitting of BC2(T) = BC2(0)[1−(T/TC)2]. The black dashed line is the Pauli limit in response to the superconducting transition temperature