Fig. 4
From: Scalable high performance radio frequency electronics based on large domain bilayer MoS2
High frequency measurement of short channel RF transistors. a Schematic illustration of bilayer MoS2 RF transistor. S, source, D drain, G gate. b The SEM images of MoS2 RF transistor with dual-channel structure show excellent alignment of gate to source and drain. Scale bar is 500 nm. c Small-signal current gain |h21| versus frequency for device with gate length of 90 nm. The extrinsic cut-off frequencies fT is 7.2 GHz. Where Vds = 3 V and Vgs = −1 V. d Unilateral power gain U versus frequency for device with gate length of 90 nm. The extrinsic maximum oscillation frequency fmax is 23 GHz. Where Vds = 3 V and Vgs = −1 V. e Voltage gain versus frequency for device with gate length of 90 nm. Where Vds = 3 V and Vgs = −1 V. f Extrinsic fT as a function of gate length. g Extrinsic fmax as a function of gate length. h fmax/fT as a function of gate length
