Table 1 CVD conditions for VS pSi thin film deposition

From: Large-area and adaptable electrospun silicon-based thermoelectric nanomaterials with high energy conversion efficiencies

Parameter

SiO2 substrate

Si active layer

Temperature (°C)

630

630

Pressure (Torr)

5

1

Time (min)

30

300

SiH4-H2 flow (sccm)

20

10

200 ppm B2H6 in H2 flow (sccm)

50

50

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