Fig. 2
Observation of nonreciprocal transport in MoGe|YIG. a A schematic illustration of the sample structure and measurement setup. The MoGe|Y3Fe5O12 (YIG) sample on a Gd3Ga5O12 (GGG) substrate is placed in a magnetic field almost parallel to the sample surface. An a.c. input current I with a frequency f is applied to the sample, and V2f, the a.c. voltage signal with frequency 2f, is measured. b Electron diffraction pattern from the MoGe layer. c The B–T phase diagram of the MoGe and appearance of non-zero nonreciprocal resistivity denoted as Δ2f ≠ 0 peak. The vortex-solid melting field Bm and the upper critical field Bc2 were determined by the conditions ρ(Bm) = 10−3ρN and ρ(Bc2) = 0.95ρN, respectively, where ρN is the resistivity in the normal state. Dotted lines are guides for eyes. d Magnetic field dependence of resistivity ρ0 at T = 4 K. e Magnetic field dependence of nonreciprocal resistivity coefficient Δ2f (I0 = 40 μA, f = 13.7 Hz). Inset: Frequency dependence of the peak value of Δ2f divided by the peak value at f = 1 kHz, \({\mathrm{\Delta }}_{2f}^{{\mathrm{peak}}}{\mathrm{/\Delta }}_{2f}^{{\mathrm{peak}}}(1\,{\mathrm{kHz}})\). Magnetic field dependence of f ρ0, and g Δ2f at selected temperatures
