Fig. 3
D.c. voltage generation observed in MoGe|YIG. a D.c. voltage Vdc peak in the B–T phase diagram of MoGe. The inset shows the measurement setup. The direction of the magnetic field is almost parallel to the sample surface. b Magnetic field dependence of the d.c. voltage generated in the MoGe layer at selected temperatures. The length of the scale bar is 2 μV. c Temporal evolution of the generated power P10Ω in a constant magnetic field (T = 6 K, B = 2.5 T, with the magnet in persistent mode). P10Ω was measured on a 10 Ω resistor connected parallel to the sample. d–f Magnetic field dependence of d.c. voltages in a MoGe|YIG sample for positive, zero, and negative temperature difference, respectively, between the top and the bottom of the sample at T = 4 K. D.c. voltage generated in g MoGe|YIG sample #2, h MoGe|SiO2(10 nm)|YIG, and i MoGe|SiO2 at T = 6 K
