Fig. 4 | Nature Communications

Fig. 4

From: Single crystal hybrid perovskite field-effect transistors

Fig. 4

Characteristics of bottom-contact TSC-FETs. a Schematic representation of bottom-gate, bottom-contact (BGBC) TSC-FET device. Representative transfer characteristics of TSC-FETs of b MAPbCl3, c MAPbBr3, and d MAPbI3 using forward/reverse gate voltage sweeps from −10 to 10 V at a rate of 0.05 V s−1, with VDS = −2 V. Insets of b–d show the linear regime of the respective devices. e Field-effect hole mobility distribution for 20 devices fabricated and tested for each halide perovskite

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