Fig. 2
Plasmon-assisted THz photodetection. a Responsivity measured at f = 130 GHz and three representative temperatures. Orange rectangle highlights an offset stemming from the rectification of incident radiation at the p-n junction between the p-doped graphene channel and the n-doped area near the contact. Upper inset: FET-factor F as a function of Vg at the same T. Lower inset: maximum Ra as a function of T. b Gate dependence of responsivity recorded under 2 THz radiation. The upper inset shows a zoomed-in region of the photovoltage for electron doping. Resonances are indicated by black arrows. Lower inset: resonant responsivity at liquid-nitrogen temperature
