Fig. 5
From: Planar and van der Waals heterostructures for vertical tunnelling single electron transistors
Low-density non-periodic array of 10 nm GQDs embedded in hBN matrix and electron tunnelling transistors based on such GQDs. a SEM image of a GQD-hBN sample obtained after the transfer of hBN monolayer on Pt NPs/SiO2 substrate and the conversion reaction. It shows GQDs with a long spacing (0.5–1.5 μm), marked by white arrows. Scale bar 1 μm. b The conductance G(Vg = −56V,Vb) plot (extracted from d along the horizontal white dashed line). Arrows indicate peaks originating from boundaries of Coulomb diamonds (red) and from impurity-assisted tunnelling (green). c The conductance G(Vg, Vb = 0 mV) plot (extracted from d along the vertical white dashed line). Arrows indicate peaks originating from boundaries of Coulomb diamonds (red) and from impurity-assisted tunnelling (green). d Conductance G(Vg,Vb) for a device with aperiodic 10 nm GQDs measured at T = 250 mK. Thick and short arrows indicate the crossing of the edges of the Coulomb diamonds (red arrows) and the impurity-assisted tunnelling peaks (green) with the white dashed lines. The positions of the arrows are the same as on b and c. Thin and long arrows indicate the edges of the Coulomb diamonds (red arrows) and the impurity-assisted tunnelling peaks (green arrows)
