Fig. 1

Effect of gate voltage application on the SOT effective fields. a Schematic of the Hall bar used for the electrical measurements. b, c V_ω,2ω are obtained with H_ext applied parallel (||) and perpendicular (⊥) to the ac current (I_ac) flow direction. The measurement schematic with H_ext || I_ac (b) and H_ext ⊥ I_ac (c) are also shown. d V_ω and e V_2ω signals for a Pt (2 nm)/Co (0.8 nm) device as a function of in-plane external magnetic field (H_ext), with subsequent gate voltage (V_g) application events. Measurements were performed at 150 K. At this temperature, the SOT device displayed a good PMA in both the normal- and reversed-states. Both the normal- and reversed-states of devices persist at room temperature as well. The values of H_L and H_T corresponding to a current density of 10¹² A m⁻² are also shown in e. The planar Hall effect was considered in evaluating the SOT effective fields and the anomalous Nernst effect contribution was subtracted from the raw second harmonic data before plotting it