Fig. 5
From: Electric-field control of spin accumulation direction for spin-orbit torques
Current-induced switching measurements. a The Hall resistance (RH) as a function of pulses current magnitude (Ipulse) for a Pt (1.5 nm)/Co (0.8 nm) device after successive Vg application at room temperature. The switching loops in a are shown for the assist field (Hassist) direction along (+Hassist) and opposite (−Hassist) to the current flow direction. b Repeated toggling of the RH by a unidirectional current after modulating the state of device with positive and negative Vg. The switching measurements for the reversed device in a, b were performed at 150 K at which the device regained PMA
