Fig. 3
From: Strain engineering in perovskite solar cells and its impacts on carrier dynamics
Device performance and carrier dynamic behavior analysis. a Histograms of the PCEs for the devices with different strain conditions. b J–V curves of the tensile strain device and strain-free device. The inset is the stabilized current density measured at a bias voltage (0.94, 0.96 V, respectively). c TPC decay curves for PSCs with tensile strain and strain-free conditions. d The light-intensity dependence of VOC measurement related to tensile strain and strain-free device. e EIS curves for PSCs with different strain conditions and the inset is frequency response signal according to frequency parameter from 1 MHz to 100 Hz. f Variation of recombination resistance as a function of applied voltage. PCE power conversion efficiency, TPC transient photocurrent, EIS electrochemical impedance spectroscopy
