Fig. 3

Photovoltaic performance of the PSCs. a J–V curves of the optimized PSCs based on PTQ10: acceptors (1:1) without (as-cast) and with thermal annealing at 120 ^oC (for the MO-IDIC-based devices) or 110 ^oC (for the MO-IDIC-2F-based devices) for 5 min, under the illumination of AM 1.5 G, 100 mW cm⁻²; b IPCE spectra of the corresponding PSCs. Plots of c V_oc or PCE and d J_sc or FF vs. the active layer thickness ranging from 115 to 300 nm for the PSCs based on PTQ10: MO-IDIC-2F (1:1, w/w) with thermal annealing at 110 °C for 5 min