Table 3 Device peak external quantum efficiency (EQE) and photoluminescence quantum efficiency (PLQY) of our three generations devices during the course of material optimization
Device | TF EQE | P1000 EQE | EQE enhancement factor | TF PLQY | P1000 PLQY | Material engineering |
|---|---|---|---|---|---|---|
1st generation | 0.47% | 2.38% | 5.06 | 5% | 4% | N.A. |
2nd generation | 3.72% | 11.16% | 3.00 | 40% | 25% | Crystal pinning |
3rd generation | 8.19% | 17.50% | 2.14 | 85% | 35% | Crystal pinning + long-chain additive |
