Fig. 2
From: Ultrafast photonic micro-systems to manipulate hard X-rays at 300 picoseconds
Tuning the resonance frequency of a MEMS oscillator using focused ion beam (FIB). a b Scanning electron microscopy images of the MEMS device as fabricated and after multiple rounds of FIB micromachining, respectively. Note these FIB machined devices still have the phosphorous dopant-induced strained layers, which was reported in our previous work29 (more detail in the Supplementary Note 2). c Tuning curves of the MEMS device measured with 45-V (peak-to-valley) square pulses after each FIB micromachining. Note that the frequency denoted in the X-axis is the frequency of excitation voltage signal, or twice the resonance frequency of MEMS devices. A total of eight micromachining processes were performed to tune the device to 135.777 kHz (P0/2)
