Fig. 1 | Nature Communications

Fig. 1

From: Small contact resistance and high-frequency operation of flexible low-voltage inverted coplanar organic transistors

Fig. 1

Organic thin-film transistors fabricated for this study. a Chemical structures of pentafluorobenzenethiol (PFBT) used to treat the surface of the gold bottom contacts, of n-tetradecylphosphonic acid used for the gate-dielectric self-assembled monolayer (SAM), and of the organic semiconductor 2,9-diphenyl-dinaphtho-[2,3-b:2’,3’-f]thieno[3,2-b]thiophene (DPh-DNTT). b Schematic cross-section of bottom-contact and top-contact organic TFTs fabricated on silicon substrates to study the relation between the gate-oxide thickness and the contact resistance. c Schematic cross-section of bottom-contact and top-contact organic TFTs fabricated on PEN substrates to evaluate the contact resistance and the dynamic performance of TFTs and circuits on flexible plastic substrates

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