Fig. 6
Static electrical characteristics of bottom-contact and top-contact DPh-DNTT TFTs on flexible PEN substrates. The TFTs have a gate-dielectric thickness of 5.3 nm, a channel length of 8 µm, a channel width of 200 µm, and a total gate-to-contact overlap of 4 µm (a–c) or 10 µm (d–f). a, d Transfer characteristics measured in the saturation regime (VDS = −3 V). b, e Effective carrier mobility extracted from the transfer characteristics in the saturation regime (VDS = -3 V). c, f Output characteristics of the same TFTs
