Table 1 Summary of the results of the TLM measurements performed on top-contact and bottom-contact DPh-DNTT TFTs fabricated on flexible PEN substrates

From: Small contact resistance and high-frequency operation of flexible low-voltage inverted coplanar organic transistors

Device architecture

RCW (Ωcm) at VGS−Vth = −2.5 V

LT (µm) at VGS−Vth = −2.5 V

µ0 (cm2 V−1 s−1)

L1/2 (µm)

TC

56 ± 14

2.4 ± 0.6

5.7 ± 0.1

4.3 ± 0.2

BC

29 ± 13

1.1 ± 0.5

4.9 ± 0.1

2.6 ± 0.2

  1. The intrinsic channel mobility (µ0) and the channel length at which the effective carrier mobility is half the intrinsic channel mobility (L1/2) were extracted from the fits in Supplementary Figure 2c
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