Fig. 5

Charge-storage accumulative effect. a Electrical transfer curves of the CdS NR phototransistor measured in the dark after 0–32,000 s of light irradiation (25 nW cm⁻²). b Photocurrents at V_GS = 34 V, threshold voltage shifts, and c photocurrent responsivity, voltage responsivity, and detectivity at different irradiation time, which were extracted from the electrical transfer curves in a. d Electrical transfer curves of the normal and suspended CdS NR phototransistors after the irradiation by an ultraweak light of 6 nW cm⁻² for a longer time of 64,000 and 32,000 s, respectively. e Responsivity, detectivity, and f light intensity, sensitivity of several typical state-of-the-art low-dimensional semiconductor-based photodetectors