Fig. 2
From: Radiation tolerance of two-dimensional material-based devices for space applications
Fabrication. a Microscopic image of a MoS2 field-effect transistor device under ×500 magnification. The monolayer is framed within the green dashed line. b, c Microscopic and phase-shift interferometric images of the WS2 monolayer presented in the main text. The inset in c shows the optical path length difference (OPD) along the white dashed line. The monolayer has an OPD of 17.7 nm, which corresponds to a physical thickness of 0.66 nm. The scale bars in a, b are 20 and 5 μm, respectively
