Fig. 4
From: Room-temperature ferroelectricity in MoTe2 down to the atomic monolayer limit

Tc of d1T-MoTe2 and FTJ devices. a Layer-dependent Tc of d1T-MoTe2. b I–V characteristic of monolayer d1T-MoTe2 on Pt and inset shows the energy diagram of FTJ devices. c I–V characteristic of few-layer d1T-MoTe2 on graphene and inset shows the schematic of device structure