Fig. 1
From: Spontaneous current constriction in threshold switching devices
Simulated and experimental S-NDR in TaOx devices. a Quasi-DC experimental (continuous black line) and simulated (dashed blue line) I–V characteristics of the 2 μm devices with 107 kΩ ± 1 kΩ load resistor in series. b Magnified view of two experimental I–V’s with different values of load resistance. The black line is the I–V from (a) and the red line is the I–V obtained with RLOAD = 3.9 kΩ ± 0.1 kΩ. The smaller RLOAD induces threshold switching (red-dashed lines) with hysteretic behavior of the I–V. c Two simulated I–V’s where the black line was obtained with a current source and the red line was obtained with RLOAD = 5.5 kΩ ± 0.1 kΩ. The RLOAD was chosen differently from the experimental curve for demonstration purposes and accounts for the change in slope of red-dashed line between simulation and experimental curves. The red arrows in b and c indicate the path taken when measuring I–V with a triangular VSOURCE sweep. Arrows facing upwards/downwards in current are for increasing/decreasing VSOURCE. Source data are provided as a Source Data file
