Fig. 3
Robust flash memory operation. a Program-disturb (PD) verification with high-speed C–V measurement system. VFB indicates flatband voltage. (Inset) capacitance (C)–voltage (VG) traces from low speed (gray-traces) and high speed (red and green traces) measurements. Red colored lines indicate back-and-forth sweeps at high speed (time period (T) equals to 4 μs) while the sample is in programmed state. Green colored lines indicate back-and-forth sweeps at high speed (time period (T) equals to 4 μs) while the sample is in erased state. b Endurance characteristics of the device. (Inset) Shape of the pulses used in program (P), erase (E), and read operations. c Retention characteristics of the flash memory device. Programming of the state was done with a square pulse of height ±33 V and having a duration of 500 ms. d Retention characteristics of the flash memory device after endurance test of 10 k cycles. e P/E test of the flash memory devices at various temperatures. Lines are the guide to eye. f The statistical distribution of flash memory window for 47 devices. For this test applied P/E voltage is ±33 V for 300 ms
