Fig. 2
From: Scaling growth rates for perovskite oxide virtual substrates on silicon
Mapping growth conditions using production-line compatible process. Calibration sample using a fixed Sr flux of 2.50 × 1013 cm−2 s−1 grown on (La0.18Sr0.82)(Al0.59Ta0.41)O3 (LSAT). a Titanium tetraisopropoxide (TTIP) flux sequence using the beam equivalent pressure pTTIP as flux measure. b High-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) cross-section images of the calibration sample. A higher background intensity was found for layers grown under nonstoichiometric condition. The magnified images illustrate the type of defect formed and how far they protruded into the subsequent layer grown under stoichiometric conditions. The precise position of the Ruddlesden Popper (RP) faults indicated by the arrows were deduced from strain maps shown in Supplementary Fig. 9. c Reflection high-energy electron diffraction (RHEED) images taken in real-time during growth along the 〈100〉 and 〈110〉 azimuth reflecting the stoichiometry of the growth front. Scale bars on the HAADF images are 5 nm
