Fig. 3
From: A corner reflector of graphene Dirac fermions as a phonon-scattering sensor
Temperature dependence of the corner-reflector transmission: coherence, phonon scattering and saturation. a Device resistance (quasi-DC) at various temperatures T = 10…280 K. The plateau resistance decreases as the temperature increases. b At low temperatures, Fabry–Pérot type oscillations (Δk = 1.3 × 107 m−1) are observed in the resistance, they disappear at T ≈ 40 K. (Resistance offset for clarity.) c Plateau transmission as a function of temperature for various access doping values nA. Solid lines and dotted lines are calculated using Eq. (1) with d = 30 nm and d = 30 nm + 2.25 pm/K2 × T2 respectively. d Plateau transmission Eq. (1) as a function of the number of round-trips in the CR, compared to the transmission of a single p–n junction \({\cal{T}}_{{\mathrm{np}}^ + } = 0.46\) (light blue bar). We used a junction length of d = 30 nm and doping values nA = 0.5 and nB = −5 × 1012 cm−2 (black line). Varying the junction length (red and blue dashed lines) or the doping (black dotted line) only has a small effect on the overall shape of this curve. Inset: CR transmission as a function of incident angle, for various numbers of cycles. Blue line: transmission of a single n–p junction (zero cycles). Other color lines represent how the transmission is increasingly suppressed when increasing the number of round-trips (1, 2, 3, 5, 10). The transmission is weighted in Eq. (1) by the cos θ factor (black dashed line)
