Fig. 6
Comparison of electronic properties at the Γ-point of the Brillouin zone, at 300 K, between strained GaAs in GaAs/InxAl1−xAs core/shell nanowires (our results) and strain-free III-As ternary alloys (ref. 1), as a function of In-content x in the shell or the bulk. a Bandgap energy. The values for strained GaAs (blue data points) are the ones for E1 measured by photoluminescence (PL) at 300 K in Fig. 5a. The blue dashed line is a linear fit. The magenta and green curves correspond to strain-free InxGa1−xAs and strain-free InxAl1−xAs, respectively. b Electron effective mass. The values for strained GaAs (blue data points) were calculated using Eqs. (3), (4) and (5). The blue dashed line is a linear fit. The magenta curve corresponds to strain-free InxGa1−xAs. The grey bands in (a, b) indicate regimes relevant to specific device applications (telecom photonics and high electron mobility transistors-HEMTs), where typically InxGa1−xAs thin films with x = 0.53 (indicated with a vertical dashed line) are employed because they are lattice-matched to commercial InP substrates
