Fig. 3 | Nature Communications

Fig. 3

From: Van der Waals negative capacitance transistors

Fig. 3

Electric characterization of CIPS/BN/MoS2 vdW NC-FETs. a, b Schematic diagram (a) and equivalent capacitor network (b) of a CIPS/BN/MoS2 vdW NC-FET. c Top-gate transfer characteristics of vdW NC-FETs with and without interfacial h-BN layer. V*tg = Vtg−Vth. Thickness of CIPS in CIPS/MoS2 NC-FET is 49 nm and in CIPS/BN/MoS2 NC-FET is 48 nm. The thickness of BN layer is 7.5 nm. d, e Top-gate SS−Ids characteristics for reverse sweep (d) and leakage current (e) of CIPS/MoS2 and CIPS/BN/MoS2 vdW NC-FETs. f Contour plot of simulated SS as a function of thickness of CIPS (tCIPS) and BN layer (tBN) at Vds = 0.5 V and Vbg = 0 V. Symbol, experimental data

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