Fig. 4 | Nature Communications

Fig. 4

From: Van der Waals negative capacitance transistors

Fig. 4

Electrical performance of vdW NC-FET inverter. a–c Schematic structure (a), circuit schematic (b) and false-color SEM image (c) of a vdW NC-FET inverter. W/L = 5.4/4.0 for load NC-FET and W/L = 2.4/5.5 for driver NC-FET. The thickness of CIPS flake is 42 nm. Scale bar, 2 μm. d Room temperature voltage transfer characteristics, VOUTVIN, of the logic inverter measured at various VDD. e Voltage gain of the inverter at various VDD. Inset: Noise margins of vdW NC-FET inverter at VDD = 1.5 V

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