Fig. 5 | Nature Communications

Fig. 5

From: Van der Waals negative capacitance transistors

Fig. 5

VdW NC-FETs on flexible substrate. a, b Schematic structure (a) and photograph (b) of a CIPS/MoS2 vdW NC-FET on a flexible polyester substrate. The thickness of CIPS flake is 86.4 nm. Scale bar, 10 μm. c Ids−Vtg characteristics of a flexible vdW NC-FET. Vds = 0.5 V. Inset, SS−Ids characteristics. d Transfer characteristics of a flexible vdW NC-FET measured at the bending states with Rb values of 86.4, 12.4, 7.5, 5.8, 4.8, 4.2, and 3.8 mm. V*tg = Vtg-Vth. Inset, photograph of a vdW NC-FET on stressed polyester substrate. Scale bar, 5 mm. e, f The effect of bending radius on the hysteresis width (e) and SS (f) of the vdW NC-FET

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