Fig. 3 | Nature Communications

Fig. 3

From: Interface-based tuning of Rashba spin-orbit interaction in asymmetric oxide heterostructures with 3d electrons

Fig. 3The alternative text for this image may have been generated using AI.

Carrier density estimation of the LAO//STO/LAO heterostructures. a Hall effect data measured at 2 K for the LAO//STO/LAO heterostructure with 8, 20, and 60 uc STO layers along with the linear fitting. b STO thickness-dependent Hall carrier density, from which the filling of electrons per Ti is calculated (inset). The solid lines are guides to the eyes

Back to article page