Fig. 5

Spin splitting modulated by carrier-filling. a Evolution of magnetoresistance at 2 K for the LAO//STO/LAO oxide heterostructures with various STO thicknesses. b Fitting (lines) of the magnetoconductance data (symbols) to the Iordanskii, Lyanda-Geller, and Pikus model. c Thickness-dependent fitting parameters: Bso1 and Bso3 are the characteristic fields of the linear and cubic Rashba terms, respectively, and Bφ is the characteristic field for the phase coherence. d Inverse spin relaxation lengths, linear Rashba coefficient αlinear, and spin splitting energy Δcubic as a function of the filling carriers per Ti in the heterostructures