Fig. 1 | Nature Communications

Fig. 1

From: Stable and bright formamidinium-based perovskite light-emitting diodes with high energy conversion efficiency

Fig. 1The alternative text for this image may have been generated using AI.

PeLED device structure and optoelectronic characteristics. a Device structure and cross-sectional HRTEM image (scale bar, 20 nm). b Device EL spectra upon various biases. c Current density and radiance versus driving voltage for the highest EQE device (10 wt.%). Radiance of 241 W sr−1 m−2 is obtained under 2.75 V. d EQE and ECE versus current density for the highest EQE device (10 wt.%). A peak EQE of 14.2% is achieved at a current density of 188 mA cm−2 and a peak ECE of 10.7% is obtained at a current density of 54 mA cm−2. e Histogram of peak EQEs measured from 82 devices, which shows an average peak EQE of 10.5% with a relative standard deviation of 16%

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