Fig. 5
From: Understanding resonant charge transport through weakly coupled single-molecule junctions
Investigation of devices B–D at 77 K. a IV traces at resonance of 3 devices (B, C, D) of molecule M on SiO2 dielectric at 77 K (data from ref. 22) and the fit to the Marcus model (orange) and the quantum model (green). For clarity, fewer experimental data points were shown. b Charge stability diagrams of the same 3 devices as in c, and the reconstructed stability diagrams from the fits in c according the quantum model, or the Marcus model. c Gate traces (Ib vs. Vg) at multiple values of Vb (indicated by horizontal lines in b)) for device C to compare experimental data and fits to the quantum model (upper panel, green) and Marcus model (lower panel, orange). Ib values for consecutive gate traces are offset by 0.2 nA for clarity. Gate trace comparisons for devices B and D are displayed in Supplementary Note 7
