Fig. 2 | Nature Communications

Fig. 2

From: High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region

Fig. 2The alternative text for this image may have been generated using AI.

Kelvin probe force microscopy (KPFM) characterization and energy band alignments of the MoS2/AsP vdWHs diode. a Surface potential image of a clean MoS2/AsP heterostructure with similar layer thicknesses. Scale bar is 2 μm. b Potential line profile across the heterostructure edge showing the Fermi level difference between MoS2 and AsP. The corresponding energy band alignments of the MoS2/AsP vdWHs diode at different bias, c Vds = 0 V, d −0.5 V < Vds < 0 V, e Vds < −0.5 V, and f Vds > 0 V

Back to article page