Fig. 3: Phase field simulations of anisotropic and isotropic patches.
From: Templated dewetting of single-crystal sub-millimeter-long nanowires and on-chip silicon circuits
a–c Left panel: cross sections at different times of phase field simulations of dewetting of a patch with initial aspect ratio h/w = 1.2/100, 1.2/200, and 1.4/200, respectively, taking into account the crystal anisotropy. Right panels: same as the left panel for the isotropic case. The full dynamics is shown in the Supplementary Movies 1 and 2 for a left and right panels respectively; 3 and 4 for b left and right panels, respectively; 5 and 6 for c left and right panels respectively). d Comparison between the experimental data (symbols, from Fig. 2d) and phase field simulations (continuous lines). The shaded areas highlight the buried oxide (BOX) underneath the dewetted structures.
