Fig. 5
From: Single-spin qubits in isotopically enriched silicon at low magnetic field
Self-consistent Schrödinger–Poisson simulations of the device. a A projection of the full device model layout, showing its ALD-clad top surface (grey) with the ESR line (purple) in the back. b Simulated charge accumulation along the Si/SiO2 interface in a nominally tuned device, with the partitioned 2DEG of the sensing SET circuit visible in the left, reservoir puddle in the right, and a pair of interacting electrons in the centre, confined by the electrostatically defined double quantum dot potential.
